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| SMD Type Dual P-Channel 30-V(D-S) MOSFET KI4953DY IC IC Features 100% Rg Tested 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * TA = 25 TA = 70 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient* * Surface Mounted on 1" X 1' FR4 Board. TJ, Tstg RthJA )* TA = 25 TA = 70 IDM IS PD Symbol VDS VGS ID Rating -30 20 -4.9 -3.9 -30 -1.7 2 1.3 -55 to 150 62.5 /W W A Unit V www.kexin.com.cn 1 SMD Type KI4953DY Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Drain-Source On-State Resistance* Forward Transconductance* Schottky Diode Forward Voltage* Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width 300 s, duty cycle Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd Rg td(on) tr td(off) tf trr 2%. IF = -1.7 A, di/dt = 100 A/ s VDD = -15 V, RL = 15 ID = -1 A, VGEN = -10V, RG = 6 2 9 13 25 15 60 VDS = -15V, VGS = -10 V, ID = -4.9A Testconditons VDS = VGS, ID = -250 A VDS = 0 V, VGS = 20 V Min -1 100 -1 -25 -20 0.043 0.070 10 0.8 16 5 2 7.1 15 20 40 25 90 -1.2 25 0.053 0.095 Typ Max IC IC Unit V nA A A A VDS = -30V, VGS = 0 V VDS = -30V, VGS = 0 V, TJ = 55 VDS - 5 V, VGS = -10 V VGS = -10 V, ID = -4.9A VGS = -4.5 V, ID = -3.6A VDS = -15 V, ID = -4.9A IS = -1.7 A, VGS = 0 V S V nC nC nC ns ns ns ns ns 2 www.kexin.com.cn |
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